DMP6023LE

Document number: DS37199 Rev. 3 - 2

4 of 7

www.diodes.com

January 2015

© Diodes Incorporated

DMP6023LE

T , JUNCTION TEMPERATURE ( C)

J



Figure 7 On-Resistance Variation with Temperature

0

0.005

0.01

0.015

0.02

0.025

0.03

0.035

0.04

0.045

0.05

-50

-25

0

25

50

75

100 125

150

V=

5V

I=

A

GS

D

-4.

-5

T , AMBIENT TEMPERATURE (°C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

A

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

-50

-25

0

25

50

75

100

125

150

-I = 1mA

D

-I = 250µA

D

V , SOURCE-DRAIN VOLTAGE (V)

Figure 9 Diode Forward Voltage vs. Current

SD

0

5

10

15

20

25

30

0

0.3

0.6

0.9

1.2

1.5

T= 150 C

A



T= 125 C

A



T= 85 C

A



T= 25 C

A



T= -55 C

A



V , DRAIN-SOURCE VOLTAGE (V)

Figure 10 Typical Junction Capacitance

DS

100

1000

10000

0

5

10

15

20

25

30

35

40

f = 1MHz

Q , TOTAL GATE CHARGE (nC)

Figure 11 Gate-Charge Characteristics

g

0

1

2

3

4

5

6

7

8

9

10

0

5

10 15 20 25 30 35 40 45 50 55

V= -30V

I= -5A

DS

D

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 12 SOA, Safe Operation Area

SOA, Safe Operation Area

0.01

0.1

1

10

100

0.1

1

10

100

Limited

P

= 100µs

W

P

= 1ms

W

P = 10ms

W

P = 100ms

W

P

= 1s

W

P = 10s

W

DC

T

= +150°C

J(max)

T = +25°C

A

V

= 10V

GS

Single Pulse

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