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TIC116M Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # TIC116M
Description  isc Thyristors
PDF  1 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

TIC116M Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  TIC116M Datasheet HTML 1Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc Thyristors
TIC116M
APPLICATIONS
·
8A contimunous on-state current
·
80A surge-current
·
Glass passivated
·
Max IGT of 20mA
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
Repetitive peak off-state voltage
600
V
VRRM
Repetitive peak reverse voltage
600
V
IT(AV)
On-state current Tc=80℃
5
A
IT(RMS)
RMS on-state current Tc=80℃
8
A
ITM
Surge peak on-state current
80
A
PGM
Peak gate power PW≤300μs
5
W
PG(AV)
Average gate power
1
W
Tj
Operating Junction temperature
110
℃
Tstg
Storage temperature
-40 ~+125
℃
Rth(j-c)
Thermal resistance, junction to case
3
℃
/W
Rth(j-a)
Thermal resistance, junction to ambient
62.5
℃
/W
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
IRRM
Repetitive peak reverse current
VRM=VRRM, Tj=110℃
2.0
mA
IDRM
Repetitive peak off-state current
VRM=VRRM, Tj=110℃
2.0
mA
VTM
On-state voltage
ITM= 8A
1.7
V
IGT
Gate-trigger current
VAA=6V; RL=100Ω
20
mA
VGT
Gate-trigger voltage
VAA=6V; RL=100Ω
1.5
V
IH
Holding current
VAA=6V; RGK=1kΩ,IT=100mA
40
mA


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