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TIC225D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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TIC225D Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 1 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc Triacs TIC225D FEATURES · With TO-220 package · Sensitive Gate Triacs · Glass Passivated · Max IGT of 5 mA (Quadrants 1) ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 400 V VRRM Repetitive peak reverse voltage 400 V IT(RMS) RMS on-state current (full sine wave)TC=70℃ 8 A ITSM Non-repetitive peak on-state current 70 A Tj Operating junction temperature 110 ℃ Tstg Storage temperature -45~150 ℃ Rth(j-c) Thermal resistance, junction to case 2.5 ℃ /W Rth(j-a) Thermal resistance, junction to ambient 62.5 ℃ /W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MAX UNIT IDRM Repetitive peak off-state current VD=VDRM, TC=110℃ 2.0 mA IGT Gate trigger current Ⅰ Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs 5 mA Ⅱ 20 Ⅲ 10 Ⅳ 30 IH Holding current Vsupply = 12 V†, IG= 0 initial ITM= 100mA 20 mA VGT Gate trigger voltage all quadrant Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs 2 V VTM On-state voltage IT= 12A; IG= 50mA 2.1 V |
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