BTS770G datasheet(13/17 Pages) SIEMENS

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BTS 770 G

Semiconductor Group

1999-01-07

Control Inputs of Lowside Switches GL1, 2

Gate-threshold-voltage

GL(th)

0.8

1.6

2.5

GL = VDSL;

DL = 1 mA

Transconductance

–5–S

DSL = 20 V;

DL = 20 A

Switching Times of Lowside Switch

Switch-ON delay time;

GS = 5 V; RGS = 50Ω

d_ON_L

–

resistive load

SL = 1 A; VS = 12 V

Switch-ON time;

GS = 5 V; RGS = 50Ω

ON_L

–

140

resistive load

SL = 1 A; VS = 12 V

Switch-OFF delay time;

GS = 5 V; RGS = 50Ω

d_OFF_L

–

140

190

resistive load

SL = 1 A; VS = 12 V

Switch-OFF time;

GS = 5 V; RGS = 50Ω

OFF_L

–

115

resistive load

SL = 1 A; VS = 12 V

Thermal Shutdown

Thermal shutdown junction

temperature

jSD

155

–

190

°C–

Thermal switch-on junction

temperature

jSO

150

–

180

°C–

Temperature hysteresis

∆T

–10

–

°C

∆T = T

jSD –TjSO

Electrical Characteristics (cont’d)

SH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V > VS > 18 V

unless otherwise specified

Parameter

Symbol

Limit Values

Unit

Test Condition

min.

typ.

max.

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