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DS14C535MSA Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # DS14C535MSA
Description  5V Supply EIA/TIA-232 3 x 5 Driver/Receiver
PDF  8 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

DS14C535MSA Datasheet(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC)
−0.3V to +6V
V
+ Pin
(V
CC − 0.3V) to +14V
V
− Pin
+0.3V to −14V
Input Voltage (D
IN, SD)
−0.3V to +5.5V
Driver Output Voltage
(V
+ +0.3V) to (V− − 0.3V)
Receiver Input Voltage
±25V
Receiver Output Voltage
− 0.3V to (V
CC +0.3V)
Junction Temperature
+150˚C
Storage Temperature Range
−65˚C to +150˚C
Lead Temperature (Soldering 4
sec.)
+260˚C
Short Circuit Duration (D
OUT)
Continuous
Maximum Package Power Dissipation @ +25˚C
SSOP MSA Package
1286 mW
Derate MSA Package 10.3 mW/˚C above +25˚C
ESD Rating (HBM, 1.5 k
Ω, 100
pF)
≥ 3.0 kV
Recommended Operating
Conditions
Min
Max
Units
Supply Voltage (V
CC)
4.5
5.5
V
Operating Free Air Temperature (T
A)
DS14C535
0
+70
˚C
DC-DC Converter Capacitors (C1–C4)
Recommended range of values is 0.1 µF to 0.68 µF, ±20%.
For more detail refer to application information section of this
data sheet.
Electrical Characteristics (Notes 2, 3)
Over recommended operating conditions, SD = 0.8V, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DEVICE CHARACTERISTICS
V
+
Positive Power Supply
No Load
D
IN = 0.8V
+8.5
V
V
−
Negative Power Supply
C1–C4 = 0.1 µF
D
IN = 2.0V
−7.0
V
I
CC
Supply Current
No Load
12
mA
I
CX
SHUTDOWN Supply Current
R
L = 3kΩ,SD = VCC
1.0
10
µA
V
IH
High Level Enable Voltage
SD
2.0
V
V
IL
Low Level Enable Voltage
GND
0.8
V
I
IH
High Level Enable Current
2.0V
≤ V
IN ≤ 5.5V
+2.0
µA
I
IL
Low Level Enable Current
GND
≤ V
IN ≤ 0.8V
−2.0
µA
DRIVER CHARACTERISTICS
V
IH
High Level Input Voltage
D
IN
2.0
V
V
IL
Low Level Input Voltage
GND
0.8
V
I
IH
High Level Input Current
2.0V
≤ V
IN ≤ 5.5V
+1.0
µA
I
IL
Low Level Input Current
GND
≤ V
IN ≤ 0.8V
−1.0
µA
V
OH
High Level Output Voltage
R
L = 3kΩ
+5.0
8
V
V
OL
Low Level Output Voltage
−6.7
−5.0
V
I
OS+
Output High Short
V
O = 0V, VIN = 0.8V (Note 7)
−40
−20
−8
mA
Circuit Current
I
OS−
Output Low Short
V
O = 0V, VIN = 2.0V (Note 7)
6
15
40
mA
Circuit Current
R
O
Output Resistance
−2V
≤ V
O ≤ +2V, VCC = GND = 0V
300
1200
Ω
RECEIVER CHARACTERISTICS (Note 4)
V
TH
Input High Threshold Voltage
R1–R5, SD = 0.8V (Active Mode)
1.4
2.4
V
R5, 2.0V
≤ SD ≤ 5.5V (Shutdown Mode)
2.0
2.8
V
V
TL
Input Low Threshold Voltage
R1–R5, SD = 0.8V (Active Mode)
0.8
1.1
V
R5, 2.0V
≤ SD ≤ 5.5V (Shutdown Mode)
0.8
1.1
V
V
HY
Hysteresis (Note 4)
0.15
1.0
V
R
IN
Input Resistance
V
IN = ±3V to ±15V
3.0
5.4
7.0
k
Ω
I
IN
Input Current
V
IN = +15V
2.14
5.0
mA
V
IN = +3V
0.43
1.0
mA
V
IN = −3V
−1.0
−0.43
mA
V
IN = −15V
−5.0
−2.14
mA
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