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DS1776 Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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DS1776 Datasheet(HTML) 3 Page - National Semiconductor (TI) |
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3 / 11 page ![]() DC Electrical Characteristics (Continued) V CC = 5V ±10% (Unless Otherwise Specified) DC testing temp. groups: 1 = +25˚C, 2 = +125˚C, 3 = −55˚C Symbol Parameter Conditions Temp. Min Typ Max Units (Notes 3, 5) Group (Note 4) Voltage Except An V CC=Min, II=−18 mA −1.2 V I IH2 Input Current OEBn, OEA, LE V CC=Min, VI=7.0V 1, 2, 3 1 100 µA at Max An V CC=Min, VI=5.5V 0.01 1 mA Input Voltage Bn V CC=Min, VI=5.5V 0.01 1 mA I IH1 Input Current OEB, OEA, LE V CC=Max, VI=2.7V 20 µA at Max B0–B7 V CC=Max, VI=2.1V 100 µA Input Voltage I IL Low Level OEB, OEA, LE V CC=Max, VI=0.5V 2, 3 −40 µA Input Current 1 −20 µA Bn V CC=Max, VI=0.3V 1, 2, 3 −100 µA I OZH TRI-STATE An V CC=Max, VO=2.7V 1, 2, 3 +I IH Output Current, 70 µA High Level Voltage Applied I OZH TRI-STATE An V CC=Max, VO=0.5V 1, 2, 3 +I IL Output Current, −70 µA Low Level Voltage Applied I X High Level V CC=Max, VX=VCC, 1,2,3 Control Current LE=OEA=OEBn=2.7V −100 100 µA An=2.7V, Bn=2.0V V CC=Max, VX=3.14V & 3.47V, 1, 2, 3 LE=OEA=OEBn=2.7V, −10 10 mA An=2.7V, Bn=2.0V I OS Short-Circuit An V CC=Max, Bn=1.9V, 1, 2, 3 Output Current OEA=2.0V, OEBn=2.7V −60 −75 −150 mA (Note 6) I CC Supply Current I CCH V CC=Max, VIH (A)=5.0V 1, 2 37 mA I CCH 341 mA I CCL V CC=Max, VIL(A)=0.3V 1, 2, 3 38 mA I CCZ V CC=Max, VIL(A)=0.3V 1, 2, 3 35 mA I OFF Power Off Bn=2.1V, V CC=0.0V, 1, 2, 3 100 µA Output Current V IL=Max or VIH=Min Note 1: Absolute Maximum Ratings are those values beyond which damage to the device may occur. Note 2: Unless otherwise specified all voltages are referenced to ground. Note 3: For conditions shown as Min or Max, use the appropriate value specified under recommended operating conditions. Unless otherwise specified, VX = VCC for all test conditions. Note 4: All typical values are at VCC = 5V, TA = 25˚C. Note 5: Due to test equipment limitations, actual test conditions are for VIH = 1.9V and for VIL = 1.2V, however the specified test limits and conditions are guaranteed. Note 6: Not more than one output should be shorted at a time. For testing [<i]nfOS the use of high speed test apparatus and/or sample-and-hold techniques are preferable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged shorting of a High output may raise the chip tem- perature above normal and thereby cause invalid readings in other parameter tests. In any squence of parameter test [<i]nfOStest should be performed last. Note 7: Not more than one output should be shorted at a time. For testing IOS, the use of high speed test apparatus and/or sample-and-hold techniques are pref- erable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged shorting of a High output may raise the chip tem- perature above normal and thereby cause invalid readings in other parameter tests. In any squence of parameter test, IOS tests should be performed last. www.national.com 3 |
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