FEATURES

Direct Replacement For SILICONIX 2N/SST4416 & 2N4416A

VERY LOW NOISE FIGURE (400 MHz)

4 dB (max)

EXCEPTIONAL GAIN (400 MHz)

10 dB (min)

ABSOLUTE MAXIMUM RATINGS

1

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

-65 to +200 °C

Operating Junction Temperature

-55 to +135 °C

Maximum Power Dissipation

Continuous Power Dissipation

300mW

Maximum Currents

Gate Current

10mA

Maximum Voltages

Gate to Drain or Gate to Source LS4416

-30V

Gate to Drain or Gate to Source LS4416A

-35V

ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN

TYP

MAX UNITS

CONDITIONS

2N/SST4416

-30

Gate to Source

Breakdown Voltage

2N4416A

-35

2N/SST4416

-6

Gate to Source

Cutoff Voltage

2N4416A

-2.5

-6

V

Gate to Source Saturation Current

5

15

mA

2N

-0.1

Gate Leakage Current

SST

-1.0

nA

Forward Transconductance

4500

7500

Output Conductance

50

µS

Input Capacitance

2

0.8

Reverse Transfer Capacitance

2

4

Output Capacitance

2

2

pF

Equivalent Input Noise Voltage

6

nV/√Hz

*Optional Package For 2N4416

2N SERIES*

TO-92

BOTTOM VIEW

123

SD G

SST SERIES

1

2

3

SOT-23

TOP VIEW

D

G

S

2N SERIES

D

S

G

2

1

3

BOTTOM VIEW

TO-72

4

C

Linear Integrated Systems

2N/SST4416 2N4416A

N-CHANNEL JFET

HIGH FREQUENCY AMPLIFIER