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3N191 Datasheet(PDF) 2 Page - Linear Integrated Systems

Part # 3N191
Description  P-CHANNEL DUAL MOSFET ENHANCEMENT MODE
PDF  2 Pages
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Manufacturer  LINEAR [Linear Integrated Systems]
Direct Link  http://www.linearsystems.com
Logo LINEAR - Linear Integrated Systems

3N191 Datasheet(HTML) 2 Page - Linear Integrated Systems

  3N191 Datasheet HTML 1Page - Linear Integrated Systems 3N191 Datasheet HTML 2Page - Linear Integrated Systems  
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ELECTRICAL CHARACTERISTICS CONT. @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN
TYP
MAX UNITS
CONDITIONS
gfs
Forward Transconductance
5
1500
4000
Yos
Output Admittance
300
µS
VDS = -15V, ID = -5mA, f = 1kHz
rds(on)
Drain to Source "On" Resistance
300
Ω
VDS = -20V, ID = -100µA
Crss
Reverse Transfer Capacitance
1.0
Ciss
Input Capacitance Output Shorted
4.5
Coss
Output Capacitance Input Shorted
3.0
pF
VDS = -15V, ID = -5mA, f = 1MHz
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
SWITCHING CHARACTERISTICS
SYMBOL
CHARACTERISTIC
MIN
TYP
MAX UNITS
CONDITIONS
td(on)
Turn On Delay Time
15
tr
Turn On Rise Time
30
toff
Turn Off Time
50
ns
VDD = -15V, ID(on) = -5mA,
RG = RL = 1.4kΩ
TO-78
0.335
0.370
0.305
0.335
0.016
0.019
0.165
0.185
0.040
MAX.
DIM. A
0.016
0.021
DIM. B
MIN. 0.500
0.200
0.100
0.100
0.028
0.034
45°
1
2 3 4
5
6
7
8
0.029
0.045
SEATING
PLANE
1.
Absolute maximum ratings are limiting values above which serviceability may be impaired.
2.
Per transistor.
3.
Approximately doubles for every 10 °C increase in TA.
4.
Pulse: t = 300µs, Duty Cycle ≤ 3%
5.
Measured at end points, TA and TB.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio
otherwise under any patent or patent rights of Linear Integrated Systems.
n or



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