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LS301 Datasheet(PDF) 1 Page - Linear Integrated Systems

Part # LS301
Description  HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS
PDF  2 Pages
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Manufacturer  LINEAR [Linear Integrated Systems]
Direct Link  http://www.linearsystems.com
Logo LINEAR - Linear Integrated Systems

LS301 Datasheet(HTML) 1 Page - Linear Integrated Systems

  LS301 Datasheet HTML 1Page - Linear Integrated Systems LS301 Datasheet HTML 2Page - Linear Integrated Systems  
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Linear Integrated Systems
Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
1
7
35
BOTTOM VIEW
2
6
ELECTRICAL CHARACTERISTICS @ 25
°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS301
LS302
LS303
UNITS
CONDITIONS
BV
CBO
Collector to Base Voltage
18
35
10
MIN.
V
I
C
= 10
µAI
E
= 0
BV
CEO
Collector to Emitter Voltage
18
35
10
MIN.
V
I
C
= 10
µAI
B
= 0
BV
EBO
Emitter-Base Breakdown Voltage
6.2
6.2
6.2
MIN.
V
I
E
= 10
µA
I
C
= 0
NOTE 2
BV
CCO
Collector to Collector Voltage
100
100
100
MIN.
V
I
C
= 10
µAI
E
= 0
h
FE
DC Current Gain
2000
1000
2000
TYP.
I
C
= 1
µAV
CE
= 5V
h
FE
DC Current Gain
2000
1000
2000
MIN.
I
C
= 10
µAV
CE
= 5V
h
FE
DC Current Gain
2000
1000
2000
TYP.
I
C
= 500
µAV
CE
= 5V
V
CE
(SAT)
Collector Saturation Voltage
0.5
0.5
0.5
MAX.
V
I
C
= 1mA
I
B
= 0.1mA
I
CBO
Collector Cutoff Current
100
100
100
MAX.
pA
I
E
= 0
V
CB
= NOTE 3
I
EBO
Emitter Cutoff Current
0.2
0.2
0.2
MAX.
pA
I
E
= 0
V
EB
= 3V
C
OBO
Output Capacitance
2
2
2
MAX.
pF
I
E
= 0
V
CB
= 1V
C
C1C2
Collector to Collector Capacitance
2
2
2
MAX.
pF
V
CC
= 0
I
C1C2
Collector to Collector Leakage Current
0.5
0.5
0.5
MAX.
nA
V
CC
= NOTE 4
f
T
Current Gain Bandwidth Product
100
100
100
MIN.
MHz
I
C
= 200
µAV
CE
= 5V
NF
Narrow Band Noise Figure
3
3
3
MAX.
dB
I
C
= 10
µAV
CE
= 3V
BW = 200Hz
R
G
= 10 K
Ω
f = 1KHz
FEATURES
VERY HIGH GAIN
h
FE ≥
2000 @ 1.0
µA TYP.
LOW OUTPUT CAPACITANCE
C
OBO ≤
2.0pF
TIGHT V
BE
MATCHING
|V
BE1
-V
BE2
| = 0.2mV TYP.
HIGH f
T
100MHz
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25
°C (unless otherwise noted)
I
C
Collector Current
5mA
Maximum Temperatures
Storage Temperature
-65
° to +200°C
Operating Junction Temperature
+150
°C
Maximum Power Dissipation
ONE SIDE
BOTH SIDES
Device Dissipation @ Free Air
250mW
500mW
Linear Derating Factor
2.3mW/
°C
4.3mW/
°C
B1
E1
E2
B2
C1
C2
26 X 29 MILS
E1
E2
C1
C2
B1
B2
LS301
LS302
LS303
HIGH VOLTAGE
SUPER-BETA MONOLITHIC
DUAL NPN TRANSISTORS


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