FEATURES

Direct Replacement for SILICONIX U/SST440 & U/SST441

HIGH CMRR

CMRR ≥ 85dB

LOW GATE LEAKAGE

ABSOLUTE MAXIMUM RATINGS

1

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

-65 to +150 °C

Operating Junction Temperature

-55 to +135 °C

Maximum Power Dissipation

Continuous Power Dissipation (Total)

500mW

Maximum Currents

Gate Current

50mA

Maximum Voltages

Gate to Drain

-25V

Gate to Source

-25V

Gate to Gate

±50V

MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN

TYP

MAX UNITS

CONDITIONS

U/SST440

10

GS2

GS1

V

V

−

Differential Gate to

Source Cutoff Voltage

U/SST441

20

mV

∆T

V

V

∆

GS2

GS1

−

Differential Gate to Source Cutoff

Voltage Change with Temperature

20

µV/°C

DSS2

DSS1

I

I

Gate to Source Saturation Current Ratio

0.07

fs2

fs1

g

g

Forward Transconductance Ratio

2

0.97

CMRR

Common Mode Rejection Ratio

85

dB

ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN

TYP

MAX UNITS

CONDITIONS

Gate to Source Breakdown Voltage

-25

V

Gate to Source Cutoff Voltage

-1

-3.5

-6

V

Gate to Source Saturation Current

3

6

15

30

mA

Gate Leakage Current

-1

-500

Gate Operating Current

-1

-500

pA

SST SERIES

1

2

3

4

8

7

6

5

SOIC

S1

D1

G1

NC

NC

G2

D2

S2

U SERIES

5

BOTTOM VIEW

TO-71

1

2

3

6

7

D1

G1

S1

S2

D2

G2

Linear Integrated Systems

U/SST440,441

MONOLITHIC DUAL

N-CHANNEL JFET