SI1906DL datasheet(2/4 Pages) VISHAY

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Si1906DL

Vishay Siliconix

New Product

www.vishay.com

Document Number: 71305

S-01885—Rev. A, 28-Aug-00

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VDS = 0 V, ID = 10 mA

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 50 mA

0.4

0.9

1.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

0.001

100

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V, TJ = 55_C

On-State Drain Currenta

ID(on)

VDS = 5.0 V, VGS = 2.5 V

120

160

On-State Drain Currenta

ID(on)

VDS = 8.0 V, VGS = 4.5 V

400

800

Drain-Source On-State Resistancea

rDS(on)

VGS = 2.5 V, ID = 150 mA

1.6

2.5

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 250 mA

1.2

2.0

Forward Transconductancea

gfs

VDS = 2.5 V, ID = 50 mA

200

Diode Forward Voltagea

VSD

IS = 50 mA, VGS = 0 V

0.7

1.2

Dynamic

Total Gate Charge

5 0 V V

4 5 V I

100

350

450

Gate-Source Charge

Qgs

VDS = 5.0 V, VGS = 4.5 V, ID = 100 mA

Gate-Drain Charge

Qgd

100

Input Capacitance

Ciss

V5 0 V V

0 V f

1 MH

Output Capacitance

Coss

VDS = 5.0 V, VGS = 0 V, f = 1 MHz

Reverse Transfer Capacitance

Crss

Switchingb, c

Turn-On Delay Time

td(on)

3 0 V R

100

Rise Time

VDD = 3.0 V, RL = 100 W

0 25 A V

4 5 V R

Turn-Off Delay Time

td(off)

ID = 0.25 A, VGEN = 4.5 V, RG = 10 W

Fall Time

Notes

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

For design only, not subject to production testing.

Switching time is essentially independent of operating temperature.

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