SI4948EY datasheet(2/4 Pages) VISHAY

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Si4948EY

Vishay Siliconix

www.vishay.com

S FaxBack 408-970-5600

2-2

Document Number: 70166

S-99444—Rev. E, 29-Nov-99

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typa

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

–1

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

Zero Gate Voltage Drain Current

IDSS

VDS = –60 V, VGS = 0 V

–2

Zero Gate Voltage Drain Current

IDSS

VDS = –60 V, VGS = 0 V, TJ = 55_C

–25

On-State Drain Currentb

ID(on)

VDS v –5 V, VGS = –10 V

–20

Drain-Source On-State Resistanceb

rDS(on)

VGS = –10 V, ID = –3.1 A

0.100

0.120

Drain-Source On-State Resistanceb

rDS(on)

VGS = –4.5 V, ID = –2.8 A

0.125

0.150

Forward Transconductanceb

gfs

VDS = –15 V, ID = –3.1 A

7.5

Diode Forward Voltageb

VSD

IS = –2.0 A, VGS = 0 V

–0.8

–1.2

Dynamica

Total Gate Charge

V30 V V

10 V I

3 1 A

Gate-Source Charge

Qgs

VDS = –30 V, VGS = –10 V, ID = –3.1 A

Gate-Drain Charge

Qgd

1.6

Turn-On Delay Time

td(on)

V30 V R

Rise Time

VDD = –30 V, RL = 30 W

1 A V

10 V R

Turn-Off Delay Time

td(off)

ID ^ –1 A, VGEN = –10 V, RG = 6 W

Fall Time

Source-Drain Reverse Recovery Time

trr

IF = –2.0 A, di/dt = 100 A/ms

Notes

Guaranteed by design, not subject to production testing.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

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