Supertex inc.

Supertex inc.

www.supertex.com

DN3535

Doc.# DSFP-DN3535

A062713

Features

Applications

General Description

This low threshold depletion-mode (normally-on) transistor

utilizes an advanced vertical DMOS structure and Supertex’s

well-proven silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and with the high input

impedance and positive temperature coefficient inherent

in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Absolute Maximum Ratings

Parameter

Value

Drain-to-source voltage

BV

DSX

Drain-to-gate voltage

BV

DGX

Gate-to-source voltage

±20V

Operating and storage

temperature

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

N-Channel Depletion-Mode

Vertical DMOS FETs

Pin Configuration

GATE

SOURCE

DRAIN

DRAIN

DN5SW

W = Code for week sealed

= “Green” Packaging

Product Marking

TO-243AA (SOT-89)

TO-243AA (SOT-89)

Package may or may not include the following marks: Si or

Ordering Information

Part Number

Package Option

Packing

DN3535N8-G

TO-243AA (SOT-89)

2000/Reel

Product Summary

BV

R

DS(ON)

(max)

I

DSS

(min)

350V

10Ω

200mA

Package

θ

ja

TO-243AA (SOT-89)

Typical Thermal Resistance

Notes:

‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm.

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.