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BUV20 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BUV20
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUV20 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUV20 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUV20 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
1
isc Silicon NPN Power Transistor
BUV20
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 0.6V(Max.) @IC= 25A
·High DC Current Gain-
: hFE= 20(Min.)@ IC= 25A
·High Switching Speed
APPLICATIONS
·Designed for high speed, high current, high power
applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCER
Collector-Emitter Voltage
RBE= 100Ω
150
V
VCEX
Collector-Emitter Voltage
VBE= -1.5V
160
V
VCEO
Collector-Emitter Voltage
125
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
50
A
ICM
Collector Current-Peak
60
A
IB
Base Current-Continuous
10
A
PC
Collector Power Dissipation
@TC=25℃
250
W
Tj
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.7
℃/W


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