BUV48AFI datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc Silicon NPN Power Transistor

BUV48AFI

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 0.2A ; IB= 0; L= 25mH

450

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 50mA; IC= 0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 8A; IB= 1.6A

1.5

VCE (sat)-2

Collector-Emitter Saturation Voltage

IC= 12A ;IB= 2.4A

5.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 8A; IB= 1.6A

1.6

ICER

Collector Cutoff Current

VCE=rated VCER; RBE= 10Ω

VCE=rated VCER; RBE= 10Ω;TC=125℃

0.5

4.0

ICES

Collector Cutoff Current

VCE=rated VCES; VBE(off)= 1.5V

VCE=rated VCES; VBE(off)= 1.5V;TC=125℃

0.2

2.0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

1.0

hFE

DC Current Gain

IC= 10A ; VCE= 5V

Switching times Resistive Load

ton

Turn-on Time

IC= 8A ;IB1= 1.6A; VCC= 150V

1.0

μs

Storage Time

IC= 8A ;IB1=-IB2= 1.6A; VCC= 150V

3.0

μs

Fall Time

0.8

μs

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