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BUV56 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUV56 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN Power Transistor BUV56 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching APPLICATIONS ·Designed for switch mode power supply, UPS, DC and AC motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VBE= -1.5V 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 9 A ICM Collector Current-Peak 14 A IB Base Current-Continuous 3 A IBM Base Current-Peak 4.5 A PC Collector Power Dissipation @TC=25℃ 70 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.76 ℃/W |
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