BUV61 datasheet(2/2 Pages) ISC

2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc Silicon NPN Power Transistor

BUV61

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 0.2A; IB= 0; L= 25mH

200

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 50mA; IC= 0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 12.5A; IB= 0.625A

IC= 12.5A; IB= 0.625A; Tj= 100℃

0.9

1.2

VCE (sat)-2

Collector-Emitter Saturation Voltage

IC=25A; IB= 2.5A

IC=25A; IB= 2.5A; Tj= 100℃

0.9

1.5

VCE (sat)-3

Collector-Emitter Saturation Voltage

IC=40A; IB= 5A

IC=40A; IB= 5A; Tj= 100℃

1.2

1.9

VBE(sat)-1

Base-Emitter Saturation Voltage

IC=25A; IB= 2.5A

IC=25A; IB= 2.5A; Tj= 100℃

1.4

1.7

VBE(sat)-2

Base-Emitter Saturation Voltage

IC=40A; IB= 5A

IC=40A; IB= 5A; Tj= 100℃

1.8

ICER

Collector Cutoff Current

VCE= 300V; RBE= 10Ω

VCE= 300V; TC=100℃

ICEV

Collector Cutoff Current

VCE= 300V; VBE= -1.5V

VCE=300V;TC=100℃

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

1.0

BUV61 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

BUV61 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2

Datasheet Download

Link URL