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DS36277TM Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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DS36277TM Datasheet(HTML) 3 Page - National Semiconductor (TI) |
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3 / 12 page ![]() Electrical Characteristics (Notes 2, 4) (Continued) Over recommended Supply Voltage and Operating Temperature ranges, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Units DEVICE CHARACTERISTICS V IH High Level Input Voltage DE , RE , or DI 2.0 V CC V V IL Low Level Input Voltage GND 0.8 V I IH High Level Input Current V IH = 2.4V 20 µA I IL Low Level Input Current V IL = 0.4V −100 µA V CL Input Clamp Voltage I CL = −18 mA −0.7 −1.5 V I CC Output Low Voltage DE = 0V, RE = 0V, DI = 0V 39 60 mA I CCR Supply Current DE = 3V, RE = 0V, DI = 0V 24 50 mA I CCD (No Load) DE = 0V, RE = 3V, DI = 0V 40 75 mA I CCX DE = 3V, RE = 3V, DI = 0V 27 45 mA Switching Characteristics (Note 4) Over recommended Supply Voltage and Operating Temperature ranges, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Units DRIVER CHARACTERISTICS t PLHD Diff. Prop. Delay Low to High R L =54Ω 817 60 ns t PHLD Diff. Prop. Delay High to Low C L = 50 pF 8 19 60 ns t SKD Diff. Skew (|t PLHD–tPHLD|) C D =50pF 2 10 ns t r Diff. Rise Time ( Figures 4, 5 )11 60 ns t f Diff. Fall Time 11 60 ns t PLH Prop. Delay Low to High R L =27Ω,CL =15pF 22 85 ns t PHL Prop. Delay High to Low ( Figures 6, 7 )25 85 ns t PZH Enable Time Z to High R L = 110Ω 25 60 ns t PZL Enable Time Z to Low C L =50pF 30 60 ns t PHZ Disable Time High to Z ( Figure 8 – Figure 11 )16 60 ns t PLZ Disable Time Low to Z 11 60 ns RECEIVER CHARACTERISTICS t PLH Prop. Delay Low to High V ID = −1.5V to +1.5V 15 37 90 ns t PHL Prop. Delay High to Low C L =15pF 15 43 90 ns t SK Skew (|t PLH–tPHL|) ( Figures 13, 14 ) 6 15 ns t PZH Enable Time Z to High C L =15pF 12 60 ns t PZL Enable Time Z to Low ( Figures 15, 16 )28 60 ns t PHZ Disable Time High to Z 20 60 ns t PLZ Disable Time Low to Z 10 60 ns Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices should be operated at these limits. The tables of “Electrical Characteristics” specify conditions for device operation. Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground unless otherwise speci- fied. Note 3: ∆ |VT1| and ∆ |VOS| are changes in magnitude of VT1 and VOS, respectively, that occur when the input changes state. Note 4: All typicals are given for VCC = 5.0V and TA = +25˚C. Note 5: Threshold parameter limits specified as an algebraic value rather than by magnitude. Note 6: Hysteresis defined as VHST =VTH −VTL. Note 7: IIN includes the receiver input current and driver TRI-STATE leakage current. www.national.com 3 |
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