1

2

PIN

10.2± 0.2

4.0± 0.3

5.0± 0.1

1.4± 0.1

0.6± 0.1

4.5± 0.2

3.1

+0.2

-0.1

2.6± 0.2

0.6± 0.1

FEATURES

MECHANICAL DATA

Position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

am bient tem perature unless otherwise specified.

UNITS

Maximum recurrent peak reverse voltage

V

Maximum RMS Voltage

V

Maximum DC blocking voltage

V

A

Peak forw ard surge current 8.3ms single half

A

Maximum forw ard

(I

voltage

)

(Note 1)

)

)

Maximum reverse current

@T

at rated DC blocking voltage

@T

Maximum thermal resistance (Note 2)

K/W

Operating junction temperature range

Storage temperature range

2

. Thermal resistance f rom junction to case.

m A

30

35

40

45

50

60

80

100

8.0

150

30

35

40

45

50

60

80

100

VOLTAGE RANGE: 30 - 100 V

CURRENT: 8.0 A

Metal silicon junction, m ajority carrier conduction.

Case:JEDEC ITO-220AC,m olded plastic body

SCHOTTKY BARRIER RECTIFIER

High current capacity, low forward voltage drop.

NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.

-

55 ---- + 150

-

55 ---- + 150

Term inals:Solderable per MIL-STD-750,

1 1

Method 2026

0.1

0.5

3.0

ITO-220AC

MBRF830---MBRF8100

MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF

830

835

840

845

850

860

880

8100

Guard ring for over voltage protection.

High surge capacity.

For use in low voltage, high frequency inverters, free

Polarity: As m arked

Weight:0.056 ounces,1.587 gram

15

50

V

0.57

0.70

0.84

0.70

-

0.80

0.85

0.95

-

Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.

Dimensions in millimeters

21

25

28

32

35

42

56

70

Diode Semiconductor Korea

www.diode.kr