| Electronic Components Datasheet Search |
|
MMBD352 Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
|
|
|||||||||||||||||||||||||||||
MMBD352 Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
|
1 / 3 page ![]() Dual Hot Carrier Mixer Diodes MMBD352/353/354/355 FEATURES Very low capacitance— Less than 1.0pF@zero V. Low forward voltage—IF=10mA. MMBD352 MMBD353 Power dissipation Pd=300mW Pb-Free package is available. APPLICATIONS MMBD354 MMBD355 Designed primarily for UHF mixer applications. SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBD352 M5G SOT-23 MMBD353 M4F SOT-23 MMBD354 M6H SOT-23 MMBD355 MJ1 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Continuous reverse voltage VR 7.0 V Power Dissipation Pd 300 mW Thermal Resistance,Junction-to-Ambient RθJA 417 ℃ /W Junction and storage temperature TJ,TSTG -55-150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Conditions Reverse Breakdown Voltage V(BR) 7.0 V IR=100μA Forward voltage VF 0.60 V IF=10mA Reverse current IR 0.25 10 μA VR=3.0V VR=7.0V Diode Capacitanc CD 1.0 pF VR=0V,f=1MHz Pb Lead-free Diode Semiconductor Korea www.diode.kr |
Similar Part No. - MMBD352 |
|
Similar Description - MMBD352 |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |