FEATURES

Metal-Semiconductor junction with guard ring

Epitaxial construction

Low forward voltage drop,low switching losses

High surge capability

MECHANICAL DATA

Case:JEDEC R--1,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-202,Method 208

Polarity: Color band denotes cathode

Weight: 0.007 ounces,0.20 grams

Mounting position: Any

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

UNITS

Maximum recurrent peak reverse voltage

V

Maximum RMS voltage

V

Maximum DC blocking voltage

V

Maximum average forw ard rectified current

9.5mm lead length,

@T

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

@T

Maximum reverse current

@T

at rated DC blocking voltage @T

Typical junction capacitance

(Note2)

pF

Typical thermal resistance

(Note3)

／Ｗ

Operating junction temperature range

Storage temperature range

SB020 --- SB040

A

For use in low voltage,high frequency inverters free

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 20 --- 40 V

CURRENT: 0.6 A

R - 1

The plastic material carries U/L recognition 94V-0

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

SB020

3.Thermal resistance junction to ambient

mA

NOTE: 1. Pulse test : 300

s pulse width,1% duty cy cle.

2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.

A

20

- 55 ---- + 125

- 55 ---- + 150

60

0.6

10.0

0.5

40

0.55

Maximum instantaneous forw ard voltage

@ 0.6 A (Note 1)

SB030

SB040

40

28

30

21

20

14

20

V

30

20.0

Dimensions in millimeters

Diode Semiconductor Korea

www.diode.kr