FEATURES

For general purpose applications

MECHANICAL DATA

Case:JEDEC DO--35,glass case

Weight: Approx. 0.13 gram

(Ratings at 25

ambient temperature unless otherw ise specified)

Min.

UNITS

15

V

nA

V

pF

K/W

Storage temperature range

Reverse breakdown voltage

@ I

A

Symbols

ELECTRICAL CHARACTERISTICS

Termal resistance junction to ambient air

0.5

BAT45

SMALL SIGNAL SCHOTTKY DIODE

VOLTAGE RANGE: 15 V

CURRENT: 30 mA

DO - 35(GLASS)

mA

mA

Value

Peak reverse voltage

15

Symbols

Polarity: Color band denotes cathode end

Junction tenperature

Forward continuous current

ABSOLUTE RATINGS(LIMITING VALUES)

UNITS

V

fast switching and low logic level applications

Metal silicon schottky barrier device which is protected

by a PN junction guard ring. The low forward voltage

drop and fast switching make it ideal for protection of

MOS devices,steering,biasing and coupling diodes for

Leakage current

@ V

Junction capacitance

@ V

Forw ard voltage drop

@ I

400

1)Valid provided that electrodes are kept at ambient temperature.

Surge non repetitive forward current tp≤1s

100

60

I

V

F

Max.

Typ.

1.1

0.38

-65 ---+ 150

Test pulse:tp≤300

µ s,δ＜2%

1.0

Dimensions in millimeters

Diode Semiconductor Korea

www.diode.kr