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BAT46 Datasheet(PDF) 1 Page - Diode Semiconductor Korea

Part # BAT46
Description  SMALL SIGNAL SCHOTTKY DIODE
PDF  3 Pages
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Manufacturer  DSK [Diode Semiconductor Korea]
Direct Link  http://www.diode.kr/
Logo DSK - Diode Semiconductor Korea

BAT46 Datasheet(HTML) 1 Page - Diode Semiconductor Korea

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FEATURES
For general purpos e applications
Thes e diodes features very low turn-on voltage
and fas t s witching. Thes e devices are protected
MECHANICAL DATA
Case:JEDEC DO--35,glass case
Symbol
VR
IF
IFRM
IFSM
Ptot
Thermal resistance juntion to ambient air
RθJA
TJ
TA
TSTG
Min.
UNITS
100.0
V
Weight: Approx. 0.13 gram
VR = 0V,f=1MHz
VR = 10V,Tj=60
IR
VF
Junction tenperature
Ambient operating temperature range
Storage temperature range
Reverse breakdow n voltage
Repetitive peak reverse voltage
Forw ard continuius current
@ tamb=25
Repetitive peak forw ard current @ tp<1s, <=0.5,TA=25
15.0
5.0
0.25
0.45
IF = 250m A
1.0
VR = 75V,Tj=60
IF = 0.1m A
IF = 10m A
20.0
V
mA
mA
mW
mA
voltage, s uch as electrostatic dis charges
Pow er dissipation1)
@ TA=65
Thes e diodes is ls o available in the SOD - 123 cas e
with type des ignation BAT46W and in the
MiniMELF cas e wyht type des ignations LL46
Surge forw ard current
@ tp<10ms,TA=25
Parameter
ABSOLUTE RATINGS
UNITS
Polarity: Color band denotes cathode
Value
3001)
125
100.0
1501)
3501)
1501)
7501)
2.0
c-65 ---+ 150
ELECTRICAL CHARACTERISTICS
Parameter
Test Condition
Typ.
Symbol
BAT46
by a PN junction guard ring against exces s ive
SMALL SIGNAL SCHOTTKY DIODE
VOLT AGE RANGE: 100 V
CURRENT: 0.15 A
DO - 35(GLASS)
VR
IR = 100 A(pulsed)
/ W
Max.
c-65 ---+ 125
VR = 50V
VR = 50V,Tj=60
VR = 75V
Leakage current
pulse test tp<300 s, <2%
0.5
5.0
0.8
VR = 10V
VR = 1.5V,Tj=60
1) Valid prov ided that leads at a distance of 4mm f rom case are kept at ambient temperature
VR = 1.5V
a A
V
7.5
Forw ard voltage
pulse test tp<300 s, <2%
VR = 1V,f=1MHz
6
pF
10
CJ
Junction capacitance
Dimensions in millimeters
Diode Semiconductor Korea
www.diode.kr


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