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BAT46 Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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BAT46 Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 3 page ![]() FEATURES For general purpos e applications Thes e diodes features very low turn-on voltage and fas t s witching. Thes e devices are protected MECHANICAL DATA Case:JEDEC DO--35,glass case Symbol VR IF IFRM IFSM Ptot Thermal resistance juntion to ambient air RθJA TJ TA TSTG Min. UNITS 100.0 V Weight: Approx. 0.13 gram VR = 0V,f=1MHz VR = 10V,Tj=60 IR VF Junction tenperature Ambient operating temperature range Storage temperature range Reverse breakdow n voltage Repetitive peak reverse voltage Forw ard continuius current @ tamb=25 Repetitive peak forw ard current @ tp<1s, <=0.5,TA=25 15.0 5.0 0.25 0.45 IF = 250m A 1.0 VR = 75V,Tj=60 IF = 0.1m A IF = 10m A 20.0 V mA mA mW mA voltage, s uch as electrostatic dis charges Pow er dissipation1) @ TA=65 Thes e diodes is ls o available in the SOD - 123 cas e with type des ignation BAT46W and in the MiniMELF cas e wyht type des ignations LL46 Surge forw ard current @ tp<10ms,TA=25 Parameter ABSOLUTE RATINGS UNITS Polarity: Color band denotes cathode Value 3001) 125 100.0 1501) 3501) 1501) 7501) 2.0 c-65 ---+ 150 ELECTRICAL CHARACTERISTICS Parameter Test Condition Typ. Symbol BAT46 by a PN junction guard ring against exces s ive SMALL SIGNAL SCHOTTKY DIODE VOLT AGE RANGE: 100 V CURRENT: 0.15 A DO - 35(GLASS) VR IR = 100 A(pulsed) / W Max. c-65 ---+ 125 VR = 50V VR = 50V,Tj=60 VR = 75V Leakage current pulse test tp<300 s, <2% 0.5 5.0 0.8 VR = 10V VR = 1.5V,Tj=60 1) Valid prov ided that leads at a distance of 4mm f rom case are kept at ambient temperature VR = 1.5V a A V 7.5 Forw ard voltage pulse test tp<300 s, <2% VR = 1V,f=1MHz 6 pF 10 CJ Junction capacitance Dimensions in millimeters Diode Semiconductor Korea www.diode.kr |
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