FEATURES

For general purpose applications

This diodes features very low turn-on voltage

and fast switching. This devices are protected

MECHANICAL DATA

Case:JEDEC DO--35,glas s cas e

Weight: Approx. 0.13 gram

Symbols

Min.

UNITS

50.0

V

V

V

V

V

V

A

pF

ns

/W

200

1)

125

Value

50.0

200

1)

500

1)

5

300

1)

1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature

Continuous reverse voltage

Forw ard continuous current

@

Repetitive peak f orw ard current @ tp<1s,

0.6

0.9

5.0

8

Max.

Typ.

ELECTRICAL CHARACTERISTICS

Forw ard voltage

V

mA

mA

mw

voltage, such as electrostatic discharges

fast switching and low logic level applications

Metal s ilicon schottky barrier device which is protected

by a PN junction guard ring. The low forward voltage

drop and fast switching make it ideal for protection of

MOS devices,s teering,bias ing and coupling diodes for

UNITS

Polarity: Color band denotes cathode end

ABSOLUTE RATINGS

Junction temperature

Ambient operating temperature range

BAT86

by a PN junction guard ring against exces sive

SMALL SIGNAL SCHOTTKY DIODES

VOLTAGE RANGE: 50 V

CURRENT: 0.2 A

DO - 35(GLASS)

0.365

0.7

0.2

0.3

Storage temperature range

Reverse breakdow n voltage tested w ith 100

A pulses

Symbols

0.38

Pulse test tp<300

s,

<2%

0.45

1)Valid provided that leads at a distance of 4mm f rom case are kept at ambient temperature

0.275

0.46

Thermal resistance junction to ambient air

Dimensions in millimeters

Diode Semiconductor Korea

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