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BAV16W Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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BAV16W Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 3 page  Silicon Epitaxial Planar Diode BAV16W ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage V(BR)R 75 - V IR=1.0μA Forward Voltage VF 0.62 0.72 0.855 1.0 1.25 V IF=5mA IF=10mA IF=100mA IF=150mA Reverse Current IR - 1.0 25 μA nA VR=75V VR=20V Capacitance between terminals CT - 2.0 pF VR=0,f=1.0MHz Reverse Recovery Time trr - 4.0 ns IF=IR=10mA, Irr=0.1×IR,RL=100Ω TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea |
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