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BAV17 Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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BAV17 Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 2 page ![]() 0 200℃ VR=50V 0.1 1 10 100 1000 100 IR(TJ) I R(25 ) TJ 0 100 200℃ 100 1 mW 200 300 400 500 P tot TA 1.8 1.4 .6 1 .2 .1 .2 .5 1 2 100V TJ=25 VR 50 20 10 5 0 .4 .8 1.2 1.6 2 CJ 100 10 .1 1 .01 0.2 .4 .6 .8 1.0V TJ=25 IF 1000 mA TJ=100 VF 5 mA 1 rF IF 10 1 2 10 20 50 100 2 5 20 50 100 0 90 150℃ .1 1 A DC CURRENT IF .3 .2 30 60 120 CURRENT (RECTIF.) IF(AV) IO,IF TA BAV17---BAV21 FIG.4 -- LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE FIG.5 -- DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT FIG.6 -- CAPACITANCE VERSUS REVERSE VOLTAGE FIG.1 -- FORWARD CHARACTERISTICS FIG.2 -- ADMISSIBLE FORWARD CURRENT VERSUS AMBIENT TEMPERATURE FIG.3 -- ADMISSIBLE POWER DISSLPATION VERSUS AMBIENT TEMPERATURE www.diode.kr Diode Semiconductor Korea |
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