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RS1MB Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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RS1MB Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 2 page ![]() 4 . 5± 0.1 5 1.25± 0.2 0.2± 0.05 5 . 3± 0.2 FEATURES MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified RS1DB RS1GB RS1JB RS1KB Maximumrecurrent peak reverse voltage V RRM 200 400 600 800 V MaximumRMS voltage V RWS 140 280 420 560 V MaximumDC blocking voltage V DC 200 400 600 800 V Maximumaverage forw ord rectified current c @ T L=90 OC I F(AV) Peak forw ard surge current 8.3ms single c half-sine-w ave superimposed on rated c load I FSM A Maximuminstantaneous forw ard voltage at 1.0A V F V MaximumDC reverse current @T A=25 oC at rated DC blocking voltage @T A=125 oC Maximumreverse recovery time (NOTE1) t rr 250 ns Typical junction capacitance (NOTE2) C J pF R JA R JL Operating junction and storage temperature range TJTSTG oC 700 1000 50 100 RS1MB 1000 50.0 1.30 - 55 ------ + 150 5.0 105 32 I R NOTE: 1.Rev erse recov ery time test conditions:I F=0.5A,IR=1.0A,Irr=0.25A RS1AB---RS1MB 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0 Volts REVERSE VOLTAGE: 50 --- 1000 V CURRENT: 1.0A Built-in strain relief,ideal for automated placement Case:JEDEC DO-214AA,molded plastic over 1111passivated chip SURFACE MOUNT RECTIFIERS Terminals:Solder plated, solderable per MIL-STD- 1111750, Method 2026 Plastic package has underwriters laborator 111 flammability classification 94V-0 DO - 214AA(SMB) Typical thermal resitance (NOTE3) 3. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.2''X0.2''(5.0X5.0mm2) copper pad areas For surface mounted applications UNITS 50 100 35 oC/W RS1BB High temperature soldering: 111 250 oC/10 seconds at terminals Low profile package RS1AB Polarity: color band denotes cathode end Weight: 0.003 ounces, 0.093 gram Glass passivated chip junction 1.0 70 10 500 150 30.0 Dimensions in millimeters 7.0 A A www.diode.kr Diode Semiconductor Korea |
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