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US1MB Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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US1MB Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 2 page ![]() 0.4 0.001 0.01 0.1 1 0.6 0.8 1.0 1.2 1.4 1.6 US1JB-US1MB US1AB-US1GB 1.8 10 PULSE WIDTH=300μ s1%DUTY CYCLE TJ =25 0 0 25 50 75 100 125 150 0.6 1.0 1.5 0.8 0.4 0.2 RES IST IVE OR INDUCT IV E LO A D 0.2X 0.2"(5.0X 5.0 m m ) CO PPE R PAD ARE A S 0 110 100 15 10 30 25 5 20 TL=110℃ 8.3ms SINGLE HALF SINE-WAVE (JEDEC METHOD) 0 0.1 10 20 40 60 80 100 0.01 TJ=125℃ 125℃ 100℃ 25℃ 1 100 0.1 1 10 0.01 0.1 1 10 100 100 REVERSE VOLTAGE(V) FIG.2 -- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT LEAD TEMPERATURE ℃ NUMBER OF CYCLES AT 60HZ INSTANTANEOUS FORWARD VOLTAGE(V) FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE PERCENT OF RATED PEAK REVERSE VOLTAGE. ( %) T,PULSE DURATION, US1AB---US1MB FIG.3 -- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS FIG.5 -- TYPICAL JUNCTION CAPACITANCE FIG.1 -- FORWARD CURRENT DERATING CURVE TJ=25 f=1MHz 2 4 6 10 20 40 60 0.1 0.2 0.4 1 2 4 10 40 100 20 US1JB--US1MB US1AB--US1GB 1 100 Diode Semiconductor Korea www.diode.kr |
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