LPC662IM datasheet(2/20 Pages) TI1

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LPC662

Low Power CMOS Dual Operational Amplifier

General Description

The LPC662 CMOS Dual operational amplifier is ideal for

operation from a single supply. It features a wide range of

operating voltage from +5V to +15V, rail-to-rail output swing

in addition to an input common-mode range that includes

ground. Performance limitations that have plagued CMOS

amplifiers in the past are not a problem with this design.

Input V

OS, drift, and broadband noise as well as voltage gain

(into 100 k

Ω and5kΩ) are all equal to or better than widely

accepted bipolar equivalents, while the power supply

requirement is typically less than 0.5 mW.

This chip is built with National’s advanced Double-Poly

Silicon-Gate CMOS process.

See the LPC660 datasheet for a Quad CMOS operational

amplifier and LPC661 for a single CMOS operational

amplifier with these same features.

Applications

High-impedance buffer

Precision current-to-voltage converter

Long-term integrator

High-impedance preamplifier

Active filter

Sample-and-Hold circuit

Peak detector

Features

Rail-to-rail output swing

Micropower operation (<0.5 mW)

Specified for 100 k

Ω and5kΩ loads

High voltage gain

120 dB

Low input offset voltage

3 mV

Low offset voltage drift

1.3 µV/˚C

Ultra low input bias current

2 fA

Input common-mode includes GND

Operating range from +5V to +15V

Low distortion

0.01% at 1 kHz

Slew rate

0.11 V/µs

Full military temperature range available

Application Circuit

Howland Current Pump

DS010548-23

August 2000

DS010548

LPC662IM Datasheet(PDF) 2 Page - Texas Instruments

LPC662IM Datasheet(HTML) 2 Page - Texas Instruments

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