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DS36C200 Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part # DS36C200
Description  Dual High Speed Bi-Directional Differential Transceiver
PDF  10 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

DS36C200 Datasheet(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC)
−0.3V to +6V
Enable Input Voltage
(DE, RE*)
−0.3V to (V
CC + 0.3V)
Voltage (DI/RO)
−0.3V to +5.9V
Voltage (DO/RI±)
−0.3V to +5.9V
Maximum Package Power Dissipation @+25˚C
M Package
1255 mW
Derate M Package
10.04 mW/˚C above +25˚C
Storage Temperature Range
−65˚C to +150˚C
Lead Temperature Range
(Soldering, 4 sec.)
+260˚C
ESD Rating (Note 4)
(HBM, 1.5 k
Ω, 100 pF)
≥ 3.5 kV
(EIAJ, 0
Ω, 200 pF)
≥ 300V
Recommended Operating
Conditions
Min
Typ
Max
Units
Supply Voltage (V
CC)
+4.5
+5.0
+5.5
V
Receiver Input Voltage
0
2.4
V
Operating Free Air
Temperature (T
A)
0
25
70
˚C
Electrical Characteristics (Notes 2, 3, 7)
Over supply voltage and operating temperature ranges, unless otherwise specified
Symbol
Parameter
Conditions
Pin
Min
Typ
Max
Units
DIFFERENTIAL DRIVER CHARACTERISTICS (RE* = V
CC)
V
OD
Output Differential Voltage
R
L = 55Ω,(Figure 1)
DO+,
DO−
172
210
285
mV
∆V
OD
V
OD Magnitude Change
0
4
35
mV
V
OH
Output High Voltage
1.36
V
V
OL
Output Low Voltage
1.15
V
V
OS
Offset Voltage
1.0
1.25
1.6
V
∆V
OS
Offset Magnitude Change
0
5
25
mV
I
OZD
TRI-STATE® Leakage
V
OUT = VCC or GND
−10
±1
+10
µA
I
OXD
Power-Off Leakage
V
OUT = 5.5V or GND, VCC = 0V
−10
±1
+10
µA
I
OSD
Output Short Circuit Current
V
OUT = 0V
−4
−9
mA
DIFFERENTIAL RECEIVER CHARACTERISTICS (DE = GND)
V
TH
Input Threshold High
V
CM = 0V to 2.3V
RI+,
RI−
+100
mV
V
TL
Input Threshold Low
−100
mV
I
IN
Input Current
V
IN = +2.4V or 0V
−10
±1
+10
µA
V
OH
Output High Voltage
I
OH = −400 µA
RO
3.8
4.9
V
Inputs Open
3.8
4.9
V
Inputs Terminated, R
t = 55Ω
3.8
4.9
V
Inputs Shorted, V
ID = 0V
4.9
V
V
OL
Output Low Voltage
I
OL = 2.0 mA, VID = −200 mV
0.1
0.4
V
I
OSR
Output Short Circuit Current
V
OUT = 0V
−15
−60
−100
mA
DEVICE CHARACTERISTICS
V
IH
Input High Voltage
DI,
DE
RE*
2.0
V
CC
V
V
IL
Input Low Voltage
GND
0.8
V
I
IH
Input High Current
V
IN = VCC or 2.4V
±1
±10
µA
I
IL
Input Low Current
V
IN = GND or 0.4V
±1
±10
µA
V
CL
Input Clamp Voltage
I
CL = −18 mA
−1.5
−0.8
V
I
CCD
Power Supply Current
No Load, DE = RE* = V
CC
V
CC
37
mA
R
L = 55Ω,DE = RE* = VCC
11
17
mA
I
CCR
DE = RE* = 0V
6
10
mA
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except VOD and VID.
Note 3: All typicals are given for VCC = +5.0V and TA = +25˚C.
Note 4: ESD Rating: HBM (1.5 k
Ω, 100 pF) ≥ 3.5 kV
EIAJ (0
Ω, 200 pF) ≥ 300V
Note 5: CL includes probe and fixture capacitance.
www.national.com
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