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1SS387 Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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1SS387 Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 3 page ![]() High Speed Switching Diode 1SS387 FEATURES Pb Lead-free Low forward voltage. Fast reverse recovery time. Small total capacitance. APPLICATIONS High-speed switching in surface mounted circuits. SOD-523 ORDERING INFORMATION Type No. Marking Package Code 1SS387 G SOD-523 MAXIMUM RATING @ Ta=25 ℃ unless otherwise specified Parameter Symbol Limits Unit Repetitive peak reverse voltage VRRM 85 V Reverse voltage VR 80 V Continuous forward current IF 100 mA Surge current IFSM 1 A Total power dissipation Ptot 150 mW Junction temperature Tj 125 ℃ Storage temperature Tstg -55-125 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25 ℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Conditions 0.62 V IF=1mA 0.75 V IF=10mA Forward voltage VF 0.98 1.2 V IF=100mA 0.1 μA VR=30V Reverse current IR 0.5 μA VR=80V Diode capacitance Cd 0.5 3 pF VR=0,f=1MHz Reverse recovery time trr 1.6 4 ns IF=10mA Diode Semiconductor Korea www.diode.kr |
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