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BAS516 Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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BAS516 Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 4 page ![]() High Speed Switching Diode BAS516 Parameter Symbol Min. Max. Unit Conditions 0.715 V IF=1mA 0.855 V IF=10mA 1 V IF=50mA Forward voltage VF 1.25 V IF=150mA 30 30 nA μA VR=25V VR=25V TJ=150 ℃ Reverse current IR 1 50 μA μA VR=75V VR=75V TJ=150 ℃ Diode capacitance Cd 1 pF VR=0,f=1MHz Reverse recovery time trr 4 ns IF=10mA,IR=10mA,RL=1mA TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea |
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