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1SS389 Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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1SS389 Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 3 page  Schottky Barrier Diode 1SS389 FEATURES Pb Lead-free Low forward voltage. Small package. APPLICATIONS Schottky diode in surface mounted circuits. SOD-523 ORDERING INFORMATION Type No. Marking Package Code 1SS389 S4 SOD-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Peak reverse voltage VRM 15 V DC Reverse voltage VR 10 V Continuous forward current IF 100 mA Surge current IFSM 1 A Total power dissipation Ptot 150 mW Junction temperature Tj 125 ℃ Storage temperature Tstg -55-125 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Conditions Reverse breakdown voltage V(BR)R 10 V IR=100μA 0.18 V IF=1mA 0.23 0.30 V IF=5mA Forward voltage VF 0.35 0.50 V IF=100mA Reverse current IR 20 μA VR=10V Diode capacitance Cd 20 40 pF VR=0,f=1MHz Diode Semiconductor Korea www.diode.kr |
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