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BAV199DW Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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BAV199DW Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 3 page ![]() Surface Mount Fast Switching Diodes BAV199DW Parameter Symbo l Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR)R IR=100μA 85 - V Forward voltage VF IF=1.0mA IF=10mA IF=50mA IF=150mA - 0.9 1.0 1.1 1.25 V Junction Capacitance CJ VR=0V,f=1.0MHz - 2.0 pF Reverse Recovery time trr IF=IR=10mA,Irr=0.1*IR,RL=100Ω - 3.0 ns TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea |
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