BC856A-BC858C

PNP SURFACE MOUNT SMALL

SIGNAL TRANSISTOR IN SOT23

Publication Order Number: [BC856A-BC858C]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Maximum Ratings (Tc=25°C unless otherwise noted)

Symbol

Parameter

BC856A,B

BC857A,B

BC858A,B,C

Unit

VCEO

Collector-Emitter Voltage

-65

-45

-30

Vdc

VCBO

Collector-Base Voltage

-80

-50

-30

Vdc

VEBO

Emitter-Base Voltage

-5

-5

-5

Vdc

Ic

Collector Current Continuous

-100

-100

-100

mAdc

THERMAL CHARACTERISTICS

Symbol

Parameter

Max

Unit

PD(Ta=25°C)

TotalDevice Dissipation

FR-5 Board(1), TA=25° Derate above25°

225

mW

1.8

mW/°C

PD(Ta=25°C)

TotalDevice Dissipation

Alumina Substrate, TA=25° Derate above25°

300

mW

2.4

mW/°C

RθJA

Thermal Resistance Junction to Ambient

80

V

TJ ,Tstg

Junction and Storage Temperature

55 to +150

°C

Electrical characteristics (Tc=25°C unless otherwise noted)

OFF CHARACTERISTICS

Symbol

Parameter

MIN

TYP

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

(Ic=-10mAdc,IB=0)

BC856A,B

-65

V

BC857A,B

-45

V

BC858A,B,C

-30

V

V(BR)CBO

Collector-Base Breakdown Voltage

(Ic=-

10μAdc,IE=0)

BC856A,B

-80

V

BC857A,B

-50

V

BC858A,B,C

-30

V

V(BR)EBO

Emitter-Base Breakdown Voltage

(IE=-

10μAdc,Ic=0)

BC856A,B

-5

V

BC857A,B

-5

V

BC858A,B,C

-5

V

IBO

Collector Cutoff Current V

V

(VCB=-30v)

-15

nA

(VcB=-30Vdc,TA=150°C)

-4

uA