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M8050 Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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M8050 Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 4 page ![]() Silicon Epitaxial Planar Transistor M8050 FEATURES High Collector Current.(IC= 800mA). Complementary To M8550. Excellent HFE Linearity. High total power dissipation.(PC=200mW) APPLICATIONS High Collector Current. SOT-23 ORDERING INFORMATION Type No. Marking Package Code M8050 Y11 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 800 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ Pb Lead-free Diode Semiconductor Korea www.diode.kr |
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