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MA729 Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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MA729 Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 3 page  Schottky Barrier Diode MA729 FEATURES For super-high speed switching circuit. For small current rectification. Allowing to rectify under(IF(AV)=200mA) condition. Allowing high-density mounting. APPLICATIONS SOD-323 Schottky epitaxial planar. ORDERING INFORMATION Type No. Marking Package Code MA729 2B SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit DC reverse voltage VR 30 V Repetitive peak reverse voltage VRRM 30 V Peak forward Current IFM 300 mA Average forward Current IF(AV) 200 mA Non-repetitive peak forward Surge Current IFSM 1000 mA Power Dissipation Pd 200 mW Thermal resistance,junction to ambient air RθjA 635 ℃/W Junction temperature Tj 150 ℃ Storage temperature range Tstg -55-150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Pb Lead-free Diode Semiconductor Korea www.diode.kr |
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