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MMBD101 Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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MMBD101 Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 3 page ![]() Schottky Barrier Diodes MMBD101 FEATURES Low noise figure -6.0dB @1.0GHz Surface mount package ideally suited for automatic insertion. Very low capacitance –less than 1.0pF @zero volts. High forward conductance -0.5volts (typ.) @IF=10mA. SOT-23 APPLICATIONS High speed switching. ORDERING INFORMATION Type No. Marking Package Code MMBD101 4M SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Characteristic Symbol Limits Unit DC Reverse Voltage VR 7.0 V Power Dissipation Pd 225 mW Operating Junction Temperature Range Tj 150 ℃ Storage Temperature Range TSTG -55 to +150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Characteristic Symbol Min. TYP. MAX UNIT Test Condition Reverse Breakdown Voltage V(BR)R 7.0 10 V IR=10μA Forward Voltage VF 0.5 0.6 mV IF=10mA Reverse Current IR 0.02 0.25 μA VR=3.0V Diode Capacitance CD 0.88 1.0 pF VR=0V,f=1MHz Pb Lead-free Diode Semiconductor Korea www.diode.kr |
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