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MMDL101 Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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MMDL101 Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 3 page ![]() Schottky Barrier Diode MMDL101 FEATURES Low noise figure —6.0dB Typ.@1.0GHz. Very Low Capacitance —less than 1.0pF @0V. Ultra-small surface mount package. PN junction guard ring for transient and ESD protection. SOD-323 APPLICATIONS For high-efficiency UHF and VHF detector applications. ORDERING INFORMATION Type No. Marking Package Code MMDL101 4M SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit DC reverse voltage VR 7.0 V Power Dissipation Pd 200 mW Thermal resistance,junction to ambient air RθjA 635 ℃/W Junction temperature Tj 150 ℃ Storage temperature range Tstg -65-150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Conditions Min. Typ. Max. Unit Reverse Breakdown Voltage V(BR)R IR=10μA 7.0 10 V Forward voltage VF IF=10mA 0.5 0.6 V Reverse leakage current IR VR=3.0V 20 250 nA Niose Figure NF f=1.0GHz 6.0 dB Total capacitance CT VR=0V,f=1.0MHz 0.88 1.0 pF Pb Lead-free Diode Semiconductor Korea www.diode.kr |
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