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MMDL301 Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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MMDL301 Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 3 page ![]() Schottky Barrier Diode MMDL301 FEATURES Low reverse leakage—IR=13nA(Typ). Very Low Capacitance —less than 1.5pF @15V. Extremely Low minority carrier lifetime—15ps(Typ). Pb-Free package is available. APPLICATIONS SOD-323 For high-efficiency UHF and VHF detector applications. ORDERING INFORMATION Type No. Marking Package Code MMDL301 4T SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit DC reverse voltage VR 30 V Power Dissipation Pd 200 mW Thermal resistance,junction to ambient air RθjA 635 ℃/W Junction temperature Tj 150 ℃ Storage temperature range Tstg -55-150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Conditions Min. Typ. Max. Unit Reverse Breakdown Voltage V(BR)R IR=10μA 30 V Forward voltage VF IF=1.0mA IF=10mA 0.38 0.52 0.45 0.6 V Reverse leakage current IR VR=25V 13 200 nA Total capacitance CT VR=15V,f=1.0MHz 0.9 1.5 pF Pb Lead-free Diode Semiconductor Korea www.diode.kr |
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