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S9012 Datasheet(PDF) 2 Page - Diode Semiconductor Korea

Part # S9012
Description  PNP Silicon Epitaxial Planar Transistor
PDF  4 Pages
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Manufacturer  DSK [Diode Semiconductor Korea]
Direct Link  http://www.diode.kr/
Logo DSK - Diode Semiconductor Korea

S9012 Datasheet(HTML) 2 Page - Diode Semiconductor Korea

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PNP Silicon Epitaxial Planar Transistor
S9012
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=-100μA,IE=0
-40
V
Collector-emitter breakdown voltage V(BR)CEO
IC=-1mA,IB=0
-25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-40V,IE=0
-0.1
μA
Collector cut-off current
ICEO
VCE=-20V,IB=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1
μA
DC current gain
hFE
VCE=-1V,IC=-50mA
120
400
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA, IB= -50mA
-0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=-500mA, IB= -50mA
-1.2
V
Transition frequency
fT
VCE=-6V, IC= -20mA
f=30MHz
150
MHz
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
5
pF
CLASSIFICATION OF hFE(1)
Rank
L
H
J
Range
120-200
200-350
300-400
MARKING
2T1
www.diode.kr
Diode Semiconductor Korea



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