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S9014 Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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S9014 Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 4 page ![]() Silicon Epitaxial Planar Transistor S9014 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 5 V Collector cut-off current ICBO VCB=50V,IE=0 0.1 μA Collector cut-off current ICEO VCE=35V,IB=0 0.1 μA Emitter cut-off current IEBO VEB=3V,IC=0 0.1 μA DC current gain hFE VCE=5V,IC=1mA 200 1000 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 5mA 1 V Transition frequency fT VCE=6V, IC= 20mA f=30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank L H Range 200-450 450-1000 www.diode.kr Diode Semiconductor Korea |
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