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SS8050W Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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SS8050W Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 4 page ![]() Silicon Epitaxial Planar Transistor SS8050W Parameter Symbol Test conditions MIN MAX UNIT VCE=1V,IC=100mA 120 400 DC current gain hFE VCE=1V,IC=800mA 40 Collector-emitter saturation voltage VCE(sat) IC=800 mA, IB= 80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800 mA, IB= 80mA 1.2 V Base-emitter voltage VBE VCE=1V IC=10mA 1 V Transition frequency fT VCE=10V, IC= 50mA f=30MHz 100 MHz CLASSIFICATION OF hFE(1) Rank L H J Range 120-200 200-350 300-400 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea |
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