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MUR880E Datasheet(PDF) 2 Page - ON Semiconductor

Part # MUR880E
Description  SWITCHMODE Power Rectifiers
PDF  6 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MUR880E Datasheet(HTML) 2 Page - ON Semiconductor

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MUR8100E, MUR880E
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MUR880E
MUR8100E
VRRM
VRWM
VR
800
1000
V
Average Rectified Forward Current
(Rated VR, TC = 150°C)
Total Device
IF(AV)
8.0
A
Peak Repetitive Forward Current
(Rated VR, Square Wave,
20 kHz, TC = 150°C)
IFM
16
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
100
A
Operating Junction and Storage Temperature Range
TJ, Tstg
−65 to +175
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Thermal Resistance, Junction−to−Case
RqJC
2.0
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 8.0 A, TC = 150°C)
(iF = 8.0 A, TC = 25°C)
vF
1.5
1.8
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TC = 100°C)
(Rated DC Voltage, TC = 25°C)
iR
500
25
mA
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/ms)
(IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A)
trr
100
75
ns
Controlled Avalanche Energy
(See Test Circuit in Figure 6)
WAVAL
20
mJ
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle ≤ 2.0%.



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