GSD2004A datasheet(2/4 Pages) VISHAY

Part #	GSD2004A

Description	Dual Common-Anode Small-Signal High-Voltage Switching Diode

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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2 / 4 page

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Document Number 85727

Rev. 1.3, 08-Jul-04

VISHAY

GSD2004A

Vishay Semiconductors

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

1) Device on Fiberglass Substrate, see layout on bottom of second page

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Reverse breakdown voltage

IR = 100 µAVBR

300

Leakage current

VR = 240 V

100

VR = 240 V, Tj = 150 °C

100

µA

Forward voltage

IF = 20 mA

0.83

0.87

IF = 100 mA

1.00

Diode capacitance

VF = VR = 0, f = 1 MHz

Ctot

5.0

Reverse recovery time

IF = IA = 30 mA, Irr = 3.0 mA,

RL = 100 Ω

trr

Figure 1. Typical Instantaneous Forward Characteristics

Figure 2. Typical Reverse Characteristics

18543

= 150

°C

100

°C

100

1000

200 300 400 500 600 700 800 900

100

0.1

VF - Forward Voltage ( mV )

18544

102

103

104

105

100

150

200

250

VR - Reverse Voltage(V)

= 150

°C

100°C

25°C

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