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BAV70 Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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BAV70 Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 3 page ![]() Dual surface mount switching diode BAV70 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR)R IR= 2.5μA 75 V Reverse voltage leakage current IR VR=70V VR=20V 2.5 25 μA nA Forward voltage VF IF=1mA IF=10mA IF=50mA IF=150mA 715 855 1000 1250 mV Diode capacitance CD VR=0V,f=1MHz 2.0 pF Reverse recovery time trr IF=IR=10mA,IR=1mA , VR=5V,RL=100Ω 4 ns TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea |
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