MSN23P09S datasheet(2/6 Pages) BWTECH

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MSN23P09S

20V P-Channel MOSFETs

Publication Order Number: [MS69P05]

Absolute Maximum Ratings (Tc=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

Power Dissipation (TC = 25°C)

Power Dissipation

– Derate above 25°C

1.56

0.012

W/°C

TSTG

Storage Temperature Range

-55 to +150

°C

Operating Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Symbol

Parameter

Value

Units

Min.

Typ.

Max.

RθJA

Thermal Resistance,Junction-to-Ambient

°C/W

Electrical Characteristics (TJ=25°C, unless otherwise noted)

Off Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS =0 V , ID = 250μA

-60

△BV

DSS

△T

BVDSS Temperature Coefficient

ID = -1mA, Referenced

to 25°C

-0.05

V/°C

IDSS

Drain-Source Leakage Current

VDS = -20 V , TJ= 25°C

VDS = -16 V , TJ= 125°C

-1

-10

IGSS

Gate-Source Leakage,Forward

VGS = ±10 V , VDS = 0 V

±100

On Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 uA

-0.3

-0.6

-1

RDS(ON)

Static Drain-Source

On-state Resis-tance

VGS = -4.5 V , ID = -4 A

VGS = -2.5 V , ID = -3 A

VGS = -1.8 V , ID = -2 A

△V

GS(th)

Gate Threshold Voltage

VGS = VGS, ID = 250 uA

mV/°C

gfs

Forward Transconductance

VDS = -10V , IS = -3 A

8.4

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Total Gate Charge

2,3

VDS = -10 V,

VGS = -4.5 V,

ID = -4 A

16.1

Qgs

Gate-Source Charge

2,3

1.8

Qgd

Gate-Drain Charge

2,3

3.8

CISS

Input Capacitance

VGS = 0 V,

VDS = -15 V,

f = 1MHz

1440

2100

COSS

Output Capacitance

155

230

CRSS

Reverse Transfer Capacitance

115

170

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