MS69P05

60V P-Channel MOSFETs

Publication Order Number: [MS69P05]

Description

These P-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

Features

• -60V,-20A, RDS(O

N) =48mΩ@VGS = -10V

• Improved dv/dt capability

• Green Device Available

• 100% EAS Guaranteed

• Fast Switching

• RoHS compliant package

Application

• Motor Drive

• Power Tools

• LED Lighting

Packing & Order Information

50/Tube ; 1,000/Box

Graphic symbol

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Tc=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

Drain to Source Voltage

-60

V

Gate to Source Voltage

±20

V

Continuous Drain Current (TC=25°C)

Continuous Drain Current (TC=100°C)

-20

-13

A

Drain Current Pulsed

-80

A

Single Pulsed Avalanche Energy

2

51

mJ

Single Pulsed Avalanche Current

2

-32

A

Power Dissipation (TC = 25°C)

Power Dissipation

– Derate above 25°C

46

W

0.37

W/°C