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MS34P01 Datasheet(PDF) 3 Page - Bruckewell Technology LTD

Part # MS34P01
Description  30V(D-S) P-Channel Enhancement Mode Power MOSFET
PDF  7 Pages
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Manufacturer  BWTECH [Bruckewell Technology LTD]
Direct Link  http://www.bruckewell-semi.com
Logo BWTECH - Bruckewell Technology LTD

MS34P01 Datasheet(HTML) 3 Page - Bruckewell Technology LTD

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MS34P01
-30V(D-S) P-Channel Enhancement Mode Power MOSFET
Publication Order Number: [MS34P01]
© Bruckewell Technology Corporation Rev. A -2016
Switching Characteristics (Note 4)
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
td(on)
Turn-on Delay Time
VDD = -15 V , ID = -3.2 A
VGS= -10 V , RGEN = 6 Ω
--
7
--
ns
tr
Turn-on Rise Time
--
3
--
ns
td(off)
Turn-Off Delay Time
--
30
--
ns
tf
Turn-Off Fall Time
--
12
--
ns
Qg
Total Gate Charge
VDS = -5 V , ID = -2.6 A,
VGS = -4.5 V
--
9.5
--
nC
Qgs
Gate-Source Charge
--
2
--
nC
Qgd
Gate-Drain Charge
--
3
--
nC
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
VSD
Diode Forward Voltage (Note 3)
VGS = 0 V , IS = -1 A
--
--
-1.2
V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production



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