MMBT3906 datasheet(2/5 Pages) BWTECH

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MMBT3906

PNP General Purpose Amplifier

Publication Order Number: [MMBT3906]

THERMAL CHARACTERISTICS

Symbol

Characteristic

Rating

Unit

Total Device Dissipation

Alumina Substrate

TA=25°C

Derate above 25°C

300

2.4

mW/°C

RθJA

Thermal Resistance Junction to Ambient

417

°C/W

TJ,Tstg

Junction and Storage Temperature

150°C, -55 to + 150°C

DEVICE MARKING

MMBT3906=2A

ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified

OFF CHARACTERISTICS

Symbol

Characteristic

Min

Max

Unit

V(BR)CEO

Collector-Emitter Breakdown Voltage(3)

(IC = -1.0mAdc , IB = 0 )

-40

Vdc

V(BR)CBO

Collector-Base Breakdown Voltage

(IC = -10μAdc , IE = 0 )

-40

Vdc

V(BR)CEO

Emitter-Base Breakdown Voltage

(IE = -10μAdc , IC = 0 )

-6.0

Vdc

IBEX

Base Cutoff Current

(VCE = -30Vdc , VEB = -3.0 Vdc )

-50

nAdc

ICEX

Collector Cutoff Current

(VCE= -30Vdc , VEB = -3.0 Vdc )

-50

nAdc

ON CHARACTERISTICS

Symbol

Characteristic

Min

Max

Unit

hPE

DC Current Gain

IC = -0.1mAdc , VCE = -1.0Vdc

IC = -1.0mAdc , VCE = -1.0Vdc

IC = -10mAdc , VCE = -1.0Vdc

100

300

IC = -50mAdc , VCE = -1.0Vdc

IC = -100mAdc , VCE = -1.0Vdc

VCE(sat)

Collector-Emitter Saturation Voltage

(IC = -10mAdc ,VB = -1.0 mAdc )

(IC = -50mAdc ,VB = -5.0 mAdc )

-0.25

-0.4

Vdc

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